High Bandwidth Memory 3E (HBM3E)
(In stock)
| Product Name | High Bandwidth Memory 3E (HBM3E) |
| Model Number | HBM3E (24–36GB density, 8/12Hi stack) |
| Brand | SK hynix |
| Category | High-Bandwidth DRAM / Server Memory |
| Country Origin | South Korea |
| Material | DRAM semiconductor chips with Through-Silicon Via (TSV) stacking, KGSD package type. |
| Applications | AI accelerators, GPUs, CPUs, high-performance computing (HPC), networking, automotive electronics. |
The SK hynix HBM3E is an enhanced generation of High Bandwidth Memory (HBM), designed to deliver extreme performance for AI, HPC, and advanced computing platforms.
Capacity & Speed: Offers 24–36GB density with speeds of 9.2Gbps and higher, delivering over 1.2TB/s bandwidth.
Packaging: Built using KGSD package type with 8Hi and 12Hi stack options, leveraging Through-Silicon Via (TSV) technology for vertical stacking.
Applications: Optimized for AI accelerators, GPUs, CPUs, networking systems, automotive electronics, and consumer devices.
Performance Leap: Provides higher bandwidth and density compared to HBM3, enabling faster training and inference for large-scale AI models.
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